Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellösung Fringe Method-Reference-Cited by-同舟云学术

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Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellösung Fringe Method

Published:1987-11-20 Issue:Part 1, No. 11 Volume:26 Page:1903-1906
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugita Yoshimitsu,Sugiyama Hiroshi,Iida Satoshi,Kawata Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray topography studies of microdefects in silicon;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1999-10

2. Static Debye-Waller factor analysis of hydrogen precipitates in silicon;Philosophical Magazine A;1997-01

3. A study of defects generated in Czochralski-grown Si during two-step annealing;Journal of Physics D: Applied Physics;1995-04-14

4. X-ray topographic study of defects in annealed silicon;Journal of Physics D: Applied Physics;1993-04-14

5. Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal;Japanese Journal of Applied Physics;1992-12-15

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