Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon-Reference-Cited by-同舟云学术

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Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon

Published:1987-11-20 Issue:Part 1, No. 11 Volume:26 Page:1907-1911
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Hongyong,Kanoh Hiroshi,Sugiura Osamu,Oda Shunri,Uchida Yasutaka,Hattori Takeo,Matsumura Masakiyo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semimagnetic Semiconductors;Springer Series in Solid-State Sciences;1997

2. Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser;Applied Physics A Solids and Surfaces;1993-08

3. Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation;Japanese Journal of Applied Physics;1992-06-15

4. Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas;Japanese Journal of Applied Physics;1990-01-20

5. Low-Temperature Thermal Oxidation of Silicon in N2O by UV-Irradiation;Japanese Journal of Applied Physics;1989-08-20

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