Low-Hydrogen-Content, Stable Amorphous Silicon Thin Films Prepared by Ion-Assisted Method-Reference-Cited by-同舟云学术

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Low-Hydrogen-Content, Stable Amorphous Silicon Thin Films Prepared by Ion-Assisted Method

Published:1994-10-15 Issue:Part 1, No. 10 Volume:33 Page:5652-5656
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

De Subal Chandra,Tarui Hisaki,Terakawa Akira,Maruyama Eiji,Sayama Katsunobu,Ninomiya Kunimoto,Tsuda Shinya,Nakano Shoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties and impurity levels in filtered cathodic vacuum arc (FCVA) amorphous silicon;Thin Solid Films;1997-10

2. Substrate temperature dependent photoelectrical and structural properties of a-Si:H deposited by hydrogen assisted chemical vapour deposition;Thin Solid Films;1996-11

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