Temperature and Gate Bias Effects on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors-Reference-Cited by-同舟云学术

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Temperature and Gate Bias Effects on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors

Published:1994-02-15 Issue:Part 1, No. 2 Volume:33 Page:986-990
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pejović Momčilo,Golubović Snežana,Ristić Goran,Odalović Milan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors;Nuclear Technology and Radiation Protection;2012

2. Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation;Journal of Physics D: Applied Physics;2010-12-09

3. A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface;Materials Science Forum;2007-09

4. Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing;Applied Surface Science;1997-01

5. Analysis of the Processes in Power MOSFETs during γ-Ray Irradiation and Subsequent Thermal Annealing;Physica Status Solidi (a);1996-06-16

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