Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Drastic improvement of as-sputtered silicon nitride thin film quality at room temperature by ArF excimer-laser annealing method;Current Applied Physics;2016-08
2. Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding;Applied Physics Letters;2015-12-28
3. A reliable approach to a rapid calculation of the grain size of polycrystalline thin films after excimer laser crystallization;Materiali in tehnologije;2015-09-25
4. Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure;Japanese Journal of Applied Physics;2013-08-01
5. High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing;Advanced Materials Research;2011-11
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