Single and Double δ-DopedAl0.25Ga0.75As/In0.25Ga0.75AsPseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New Type of Heterostructures for Powerful pHEMT Transistors;Optoelectronics, Instrumentation and Data Processing;2020-09
2. Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths;Semiconductors;2018-01
3. Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
4. Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-08-05
5. Spin-orbit interaction and electron elastic scattering from impurities in quantum wells;Physical Review B;2003-05-30
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