Doping Properties of Zinc in InAlGaAs Grown by Low-Pressure Metal-Organic Vapor-Phase Epitaxy-Reference-Cited by-同舟云学术

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Doping Properties of Zinc in InAlGaAs Grown by Low-Pressure Metal-Organic Vapor-Phase Epitaxy

Published:1994-06-15 Issue:Part 1, No. 6A Volume:33 Page:3359-3361
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuji Masayoshi,Makita Kikuo,Taguchi Kenko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon-doped InAl(Ga)As with low oxygen contamination;Journal of Crystal Growth;2003-06

2. Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition;Journal of Crystal Growth;2000-12

3. Triple-Period (TP)-A and CuPt-A Type Ordering in Al0.5In0.5As Grown by Metalorganic-Vapor-Phase-Epitaxy;MRS Proceedings;1999

4. GaAs pin-photodiodes with an AlGaInP window layer for use in 650-nm wavelength GI-POF data links;IEEE Photonics Technology Letters;1996-06

5. Selective growth of InAlAs by low pressure metalorganic vapor phase epitaxy;Journal of Crystal Growth;1996-04

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