Contact Resistivity Dependence on Ge:Ni Ratio in AuNiAuGe Metallization on n-GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nickel dissolution into AuGe in alloyed AuGe/Ni/Au Ohmic contacts on GaAs/AlGaAs multilayer structures;Thin Solid Films;2010-07
2. Dependence of melting, roughness and contact resistances on Ge and Ni content in alloyed AuGe/Ni/Au-type electrical contacts to GaAs/AlGaAs multilayer structures;Semiconductor Science and Technology;2010-01-29
3. Influence of Nickel layer thickness on the magnetic properties and contact resistance of AuGe/Ni/Au Ohmic contacts to GaAs/AlGaAs heterostructures;Journal of Physics D: Applied Physics;2009-06-01
4. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000
5. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09
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