Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

Published:1994-04-30 Issue:Part 1, No. 4B Volume:33 Page:2435-2438
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin True-Lon,Park Jin-Suk,Gunapala Sarath D.,Jones Eric W.,Castillo Hector M. del

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantifying the Double-Sided Neutron SEU Threat, From Low Energy (Thermal) and High Energy (${>}10$ MeV) Neutrons;IEEE Transactions on Nuclear Science;2006-12

2. Spectral detectivity and NETD of doping-spike PtSi-p-Si and HIP GeSi-Si detectors;SPIE Proceedings;2003-10-21

3. Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer;SPIE Proceedings;2003-04-15

4. Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation;SPIE Proceedings;2002-03-28

5. Resonant two-photon ionization spectroscopy of jet-cooled PtSi;The Journal of Chemical Physics;2000-03

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