Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals-Reference-Cited by-同舟云学术

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Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

Published:1994-10-15 Issue:Part 1, No. 10 Volume:33 Page:5577-5584
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hara Akito,Koizuka Masaaki,Aoki Masaki,Fukuda Tetsuo,Yamada-Kaneta Hiroshi,Mori Haruhisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum;Japanese Journal of Applied Physics;2016-10-18

2. Oxygen Precipitation in Silicon;Defects and Impurities in Silicon Materials;2015

3. In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source;Journal of Crystal Growth;2011-03

4. X-ray in situ observation of oxygen precipitation in silicon confirmed with ex situ detection methods;physica status solidi (a);2010-12-07

5. What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?;Journal of The Electrochemical Society;2009

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