Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In0.25Ga0.75As/GaAsPseudomorphic Heterostructures-Reference-Cited by-同舟云学术

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Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In0.25Ga0.75As/GaAsPseudomorphic Heterostructures

Published:1994-04-15 Issue:Part 1, No. 4A Volume:33 Page:1778-1780
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shieh Hir-Ming,Wu Chang-Luen,Hsu Wei-Chou,Wu Yue-Huei,Kao Ming-Jer

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures;Superlattices and Microstructures;2012-03

2. Multisubband electron transport in GaAs/InGaAs strained coupled quantum well structures;AIP Conference Proceedings;2012

3. The nonlocal dielectric function in the random phase approximation for n-type delta-doped quantum wells in GaAs;Journal of Applied Physics;2010-10-15

4. GaAs pseudomorphic HEMTs for low voltage high frequency DC-DC converters;2009 21st International Symposium on Power Semiconductor Devices & IC's;2009-06

5. k·p calculations of p-type δ-doped quantum wells in Si;Solid-State Electronics;2008-06

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