Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification-Reference-Cited by-同舟云学术

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Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification

Published:1994-06-30 Issue:Part 1, No. 6B Volume:33 Page:3756-3760
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukano Yoshinobu,Hontani Koji,Uchihashi Takayuki,Okusako Takahiro,Chayahara Ayumi,Sugawara Yasuhiro,Yamanishi Yoshiki,Oasa Takahiko,Morita Seizo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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4. Experimental analysis of the stability of electrostatic bits for assisted nano-assembly;Journal of Electrostatics;2006-01

5. Analysis of Local Breakdown Process in Stressed Gate SiO2Films by Conductive Atomic Force Microscopy;Japanese Journal of Applied Physics;2005-10-11

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