Ultrashallow Junction Formation Using Low-Temperature SelectiveSi1-xGexChemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition;Japanese Journal of Applied Physics;2006-09-07
2. Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD;Applied Surface Science;2004-03
3. Segregation and diffusion of impurities from doped Si 1−x Ge x films into silicon;Thin Solid Films;2000-07
4. Segregation and diffusion of phosphorus from doped Si1−xGex films into silicon;Journal of Applied Physics;1999-11-15
5. CVD Si 1-x Ge x epitaxial growth and its applications to MOS devices;SPIE Proceedings;1999-09-01
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