Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates-Reference-Cited by-同舟云学术

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Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates

Published:1994-01-01 Issue:Part 2, No. 1A Volume:33 Page:L35-L36
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Takahiro,Hasegawa Noboru,Tamaki Teruyuki,Ueda Kenji,Futagi Toshiro,Mimura Hidenori,Kanemitsu Yoshihiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescent logic gate controlled by the optical Kerr effect exhibited by porous silicon;Optics & Laser Technology;2014-07

2. Bringing Silicon to Light: Luminescence in Silicon Nanostructures;ECS Transactions;2011-04-25

3. Light emission in silicon nanostructures;Journal of Materials Science: Materials in Electronics;2008-01-12

4. Nanostructured Electronics and Optoelectronic Materials;Nanostructured Materials;2007

5. Designing with Microalloyed and Interstitial-Free Steels;Handbook of Mechanical Alloy Design;2003-11-21

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