An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)-Reference-Cited by-同舟云学术

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An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)

Published:1994-01-30 Issue:Part 1, No. 1B Volume:33 Page:524-528
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aritome Seiichi,Hatakeyama Ikuo,Endoh Tetsuo,Yamaguchi Tetsuya,Shuto Susumu,Iizuka Hirohisa,Maruyama Tooru,Watanabe Hiroshi,Hemink Gertjan,Sakui Koji,Tanaka Tomoharu,Momodomi Masaki,Shirota Riichiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conclusions;Nand Flash Memory Technologies;2015-12-25

2. Scaling Challenge Of Nand Flash Memory Cells;Nand Flash Memory Technologies;2015-12-25

3. Nand Flash Memory Devices;Nand Flash Memory Technologies;2015-12-25

4. Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories;Solid-State Electronics;2013-04

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