Author:
Kobayashi Kazuyuki,Takahiro Susuki Takahiro Susuki,Sadao Adachi Sadao Adachi
Abstract
Si surfaces chemically treated in HCl:H2O2:H2O= X:1:6 [X=1 (SC2) and 0] at 80°C have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that both the X=1 and 0 solutions result in surface chemical oxidation. The chemical oxidation occurs immediately upon immersion of the samples in the solutions. The thickness of chemical oxide shows a saturated value of ∼9.5±1 (X=1) and ∼11.5±1 Å (X=0) against immersion time t.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
17 articles.
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