Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate-Reference-Cited by-同舟云学术

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Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate

Published:1994-01-30 Issue:Part 1, No. 1B Volume:33 Page:919-924
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujikura Hajime,Iwa-ana Tadayoshi,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Patterning of pyramidal recesses in (100)InP substrate;Microelectronic Engineering;2011-01

2. Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl;Superlattices and Microstructures;2004-07

3. Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1998-03-30

4. Effects of As2Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1998-03-30

5. Grating overgrowth and defect structures in distributed-feedback-buried heterostructure laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1997-06

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