Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots;Journal of Nanomaterials;2019-04-28
2. Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI;2019-03-04
3. Stability investigations on the non-vdW-exfoliated surfaces of the topological insulatorBi2Te3: A first-principles study;Physical Review B;2016-03-11
4. Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy;Journal of Nanoscience and Nanotechnology;2012-02-01
5. Long-wavelength infrared quantum-dot based interband photodetectors;Infrared Physics & Technology;2011-05
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