Development of PolycrystallineCuInxGa1-xSe2Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV-Reference-Cited by-同舟云学术

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Development of PolycrystallineCuInxGa1-xSe2Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV

Published:1994-12-15 Issue:Part 1, No. 12A Volume:33 Page:6599-6604
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kushiya Katsumi,Ohtake Yasutoshi,Yamada Akira,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of physical vapor deposition and architecture of stoichiometric SnSe heterojunction structures for solar cells;Vacuum;2021-09

2. Difficulties of Alternative Technologies to Silicon;Photovoltaics from Milliwatts to Gigawatts;2021-02-05

3. Impact of heat-light soaking on potassium fluoride treated CIGS solar cells with CdS buffer layer;Progress in Photovoltaics: Research and Applications;2017-11-20

4. Effect of surface treatment on the Cu ₂ ZnSnS ₄ thin films using a cationic surfactant;physica status solidi c;2017-03-08

5. Probing diffusion of In and Ga in CuInSe2/CuGaSe2 bilayer thin films by x-ray diffraction;Journal of Crystal Growth;2015-12

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