Epitaxial Structures of Band-Gap-Engineered $\alpha$-(Cr$_{x}$Fe$_{1-x}$)$_{2}$O$_{3}$ ($0 \leq x\leq 1$) Films Grown on $C$-Plane Sapphire-Reference-Cited by-同舟云学术

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Epitaxial Structures of Band-Gap-Engineered $\alpha$-(Cr$_{x}$Fe$_{1-x}$)$_{2}$O$_{3}$ ($0 \leq x\leq 1$) Films Grown on $C$-Plane Sapphire

Published:2012-11-20 Issue: Volume:51 Page:11PG11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mashiko Hisanori,Oshima Takayoshi,Ohtomo Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental observation of spin-phonon coupling in Cr2O3 and Fe2O3 solid solution and bandgap engineering;Materials Science and Engineering: B;2022-12

2. Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire;Thin Solid Films;2017-06

3. (Invited) Photocurrent Spectroscopy in Corrosion and Passivity Studies. A Critical Assessment;ECS Transactions;2017-01-09

4. Electronic structure of c-axis controlled α-Fe2O3 thin film probed by soft-X-ray spectroscopy;Japanese Journal of Applied Physics;2016-04-14

5. Boundary magnetization properties of epitaxialCr2−xAlxO3thin films;Physical Review B;2015-06-02

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