Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference7 articles.
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2. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
3. Ultrahigh spontaneous emission extraction efficiency induced by evanescent wave coupling
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1. High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure;Semiconductor Science and Technology;2020-06-02
2. High-Efficiency, High-Power AlGaInP Thin-Film LEDs with Micron-Sized Truncated Cones as Light-Extraction Structures;physica status solidi (a);2018-01-15
3. Controlling the directionality of spontaneous emission by evanescent wave coupling;Applied Physics Letters;2015-09-28
4. Enhancement of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure by low-refractive-index surface layers;Optics Express;2014-09-30
5. Enhanced light extraction in GaN-based light-emitting diodes by evanescent wave coupling effect;Applied Physics Express;2014-09-16
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