GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer-Reference-Cited by-同舟云学术

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GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

Published:2012-04-20 Issue: Volume:51 Page:04DG15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Chin-Hsiang,Tsai Chia-Ming,Cheng Chung-Fu,Yen Shuo-Fu,Su Peng-Yin,Tsai Yu-Hsuan,Tsai Cheng-Nan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

3. Solid-State Light Sources Getting Smart

4. GaN Metal–Semiconductor–Metal Photodetectors With SiN/GaN Nucleation Layer

5. Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

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