Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing-Reference-Cited by-同舟云学术

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Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Published:2012-08-20 Issue: Volume:51 Page:08HD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maeda Kenji,Obama Shinji,Tamura Hitoshi,Miya Go,Izawa Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A two-region model for azimuthal striations in an inductively coupled plasma;Plasma Sources Science and Technology;2024-01-01

2. Self-mode transition, oscillation and inverse hysteresis in ECR discharges;AIP Advances;2023-09-01

3. Boundary effect on mode transformation in an electron cyclotron resonance etching reactor;Japanese Journal of Applied Physics;2022-05-01

4. Local electron and ion density control using passive resonant coils in inductively coupled plasma;Plasma Sources Science and Technology;2021-02-01

5. Study on Uniform Plasma Generation Mechanism of Electron Cyclotron Resonance Etching Reactor;IEEE Transactions on Plasma Science;2020-10

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