Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator
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Published:2012-09-20
Issue:
Volume:51
Page:09LA09
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Thanh Pham Van,Trinh Bui Nguyen Quoc,Miyasako Takaaki,Tue Phan Trong,Tokumitsu Eisuke,Shimoda Tatsuya
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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