Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors-Reference-Cited by-同舟云学术

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Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Published:2012-06-20 Issue: Volume:51 Page:06FE17
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Hee Cheol,Park Kibog,Park Wook-Ki,Han Seong-Tae,Kim Kyung Rok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Optimization of a THz Receiver Based on 60 nm Complementary Metal–Oxide–Semiconductor Technology;Electronics;2024-08-07

2. Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors;Electronics;2024-03-25

3. Highly Sensitive Plasmonic Terahertz Detector with Integrated Sub-Wavelength Aperture Based on Asymmetric FET in 65-nm CMOS Technology;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

4. Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms;Nanomaterials;2023-02-05

5. Performance Enhancement of Silicon-Based Sub-Terahertz Detector by Highly Localized Plasmonic Wave in Nano-Ring FET;IEEE Electron Device Letters;2021-12

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