Channel Recessed One Transistor Dynamic Random Access Memory with SiO$_{2}$/Si$_{3}$N$_{4}$/SiO$_{2}$ Gate Dielectric
-
Published:2012-06-20
Issue:
Volume:51
Page:06FE08
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Park Jin-Kwon,Yang Jong-Heon,Cho Won-Ju
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering