Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching-Reference-Cited by-同舟云学术

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Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching

Published:2012-06-27 Issue: Volume:51 Page:075501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Omiya Takuma,Tanaka Akira,Shimomura Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemical etching modes of 4H-SiC in KOH solutions;Semiconductor Science and Technology;2023-04-13

2. Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution;Green Processing and Synthesis;2016-01-01

3. Synthesis of carbon films by electrochemical etching of SiC with hydrofluoric acid in nonaqueous solvents;Carbon;2014-05

4. Influence of the anodic etching current density on the morphology of the porous SiC layer;AIP Advances;2014-03

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