Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride–tetrafluoroethylene) and Pentacene Thin Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application
2. Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes
3. Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
4. Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System
5. Control of thin ferroelectric polymer films for non-volatile memory applications
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1. Mechanically Flexible Nonvolatile Field Effect Transistor Memories with Ferroelectric Polymers;Topics in Applied Physics;2020
2. P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs;Topics in Applied Physics;2020
3. Nano‐dispersion of fluorinated phosphonate‐modified nanodiamond in crystalline fluoropolymer matrix to achieve a transparent polymer/nanofiller hybrid;Polymer Composites;2018-11-08
4. 2D Mica Crystal as Electret in Organic Field‐Effect Transistors for Multistate Memory;Advanced Materials;2016-05
5. Ferroelectric properties of vinylidene fluoride/tetrafluoroethylene copolymer thin films consisting of needle-like crystals;Japanese Journal of Applied Physics;2016-04-11
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