Optical Improvement of GaN-Based Light Emitting Diodes by Interfacial Si Treatment in InGaN/GaN Quantum Well Structure
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Published:2012-09-20
Issue:
Volume:51
Page:09MK04
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Park Sangjun,Lee Sangwon,Yoo Hongjae,Choi Joowon,Lee Sung-Nam
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering