Electrical and Optical Properties of Ge-Si n-n Heterojunctions-Reference-Cited by-同舟云学术

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Electrical and Optical Properties of Ge-Si n-n Heterojunctions

Published:1966-07 Issue:7 Volume:5 Page:639B-640
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kimura Takeji,Nunoshita Masahiro,Yamaguchi Jiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SURVEY OF EXPERIMENTAL WORK ON HETEROJUNCTIONS;Semiconductor Heterojunctions;1974

2. OPTOELECTRONIC PROPERTIES OF HETEROJUNCTIONS;Semiconductor Heterojunctions;1974

3. METHODS OF PREPARATION OF HETEROJUNCTIONS;Semiconductor Heterojunctions;1974

4. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972

5. Epitaxial growth behavior of Ge on Si {111} surfaces;Physica Status Solidi (a);1970-12-16

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