Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon-Reference-Cited by-同舟云学术

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Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon

Published:1998-04-15 Issue:Part 1, No. 4A Volume:37 Page:1764-1767
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Su Shui Hsiang,Yokoyama Meiso,Su Yan Kuin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectral-luminescent properties of vapor deposited Cr:ZnS thin films and their application as saturable absorbers for 15-μm erbium lasers;Optical Materials Express;2018-02-06

2. Mid-infrared subwavelength modulator based on grating-assisted coupling of a hybrid plasmonic waveguide mode to a graphene plasmon;Nanoscale;2017

3. Single-Source Chemical Vapor Deposition of Zinc Sulfide-Based Thin Films from Zinc bis(O-ethylxanthate);Chemical Vapor Deposition;2003-03-17

4. Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer;Journal of Micromechanics and Microengineering;2001-08-10

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