Enhanced Current-Voltage Characteristics of Al0.25Ga0.75As/In0.25Ga0.75As/GaAs P-HEMTs Using an Inverted Double Channel Structure
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Published:1998-03-30
Issue:Part 1, No. 3B
Volume:37
Page:1377-1379
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Ahn Kwang-Ho,Jeon Young-Jin,Jeong Yoon-Ha,Yun Chan-Eui,Pyo Hyun-Myung
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering