Comparison of Fe- and p/n/p-Doped InP as a Current Blocking Layer for Monolithically Integrated InGaAsP/InP Laser Diodes with Passive Waveguides-Reference-Cited by-同舟云学术

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Comparison of Fe- and p/n/p-Doped InP as a Current Blocking Layer for Monolithically Integrated InGaAsP/InP Laser Diodes with Passive Waveguides

Published:1998-02-15 Issue:Part 2, No. 2B Volume:37 Page:L221-L224
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Sangmin,Kim Kangho,Oh Kwang Ryong,Kim Jeong Soo,Oh Dae Kon,Kim Hong Man,Pyun Kwang Eui

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy;Journal of Crystal Growth;2005-03

2. Bridge Mask Growth Using Organomtallic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2005-01-14

3. Telecommunication Lasers;Optical Fiber Telecommunications IV-A;2002

4. Optical devices integrated with semiconductor optical amplifier;SPIE Proceedings;2000-07-14

5. Fabrication of 1×4 Optical Switch with Gain Using Dual InGaAsP/InP Laser Diode Amplifier;Japanese Journal of Applied Physics;1999-03-15

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