Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications-Reference-Cited by-同舟云学术

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Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications

Published:1998-10-15 Issue:Part 2, No. 10B Volume:37 Page:L1247-L1250
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horng Ray-Hua,Wuu Dong-Sing,Wu Luh-Huei,Lee Ming-Kwei,Chan Shih-Hsiung,Leu Ching-Chich,Huang Tiao-Yuan,Sze Simon Min

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNzMetal Gate Electrodes;Japanese Journal of Applied Physics;2009-04-20

2. Characterizations of HfxMoyNzAlloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2008-04-25

3. Characterization of thermally stable Ir–Ta alloy thin films deposited by sputtering;Vacuum;2004-06

4. Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi2Ta2O9 Thin Film Deposition;Japanese Journal of Applied Physics;1999-12-01

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