Plasma Characterization in Chlorine-Based Reactive Ion Beam Etching and Chemically Assisted Ion Beam Etching-Reference-Cited by-同舟云学术

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Plasma Characterization in Chlorine-Based Reactive Ion Beam Etching and Chemically Assisted Ion Beam Etching

Published:1998-05-15 Issue:Part 1, No. 5A Volume:37 Page:2747-2751
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsutani Akihiro,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source;Japanese Journal of Applied Physics;2011-06-20

2. Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source;Japanese Journal of Applied Physics;2011-06-01

3. Solid Source Dry Etching Process for GaAs and InP;Japanese Journal of Applied Physics;2006-10-24

4. Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow;Japanese Journal of Applied Physics;2003-06-30

5. Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma;Japanese Journal of Applied Physics;2003-01-15

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