New Submicron and Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-TransistorI–VandC–VModel
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A unified I–V model for PD/FD SOI MOSFETs with a compact model for floating body effects;Solid-State Electronics;2003-11
2. Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2001-04
3. A compact drain-current model for stacked-gate flash memory cells;Solid-State Electronics;2000-08
4. Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects;Japanese Journal of Applied Physics;1999-02-15
5. A unified analytical fully depleted and partially depleted SOI MOSFET model;IEEE Transactions on Electron Devices;1999
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