Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2Obtained by the Photoacoustic Method-Reference-Cited by-同舟云学术

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Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2Obtained by the Photoacoustic Method

Published:1998-09-15 Issue:Part 1, No. 9A Volume:37 Page:4925-4930
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nikolić P. M.,Todorović D. M.,Vujatović S. S.,Djurić S.,Mihailović P.,Blagojević V.,Radulović K. T.,Bojičić A. I.,Radović -,Elazar J.,Urosević D.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoacoustic properties of sintered NiO;INT J MATER RES;2021

2. Highly oriented GeSe2 thin film growth using a facile low-vacuum annealing method;Scripta Materialia;2021-06

3. Direct laser micropatterning of GeSe2 nanostructures film with controlled optoelectrical properties;RSC Advances;2014

4. Synthesis of barium-zinc-titanate ceramics;Science of Sintering;2012

5. Investigation of the thermal diffusivity of thick film NTC layers obtained with the photoacoustic method;Journal de Physique IV (Proceedings);2005-06

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