Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region-Reference-Cited by-同舟云学术

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Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region

Published:1998-02-15 Issue:Part 1, No. 2 Volume:37 Page:544-549
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugiura Touko,Hase Nobuyasu,Iguchi Yasuhiro,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing;IEEE Journal of Quantum Electronics;2004-05

2. Optical properties of Nd-doped InGaAsP epilayers;Solid State Communications;2004-01

3. Optical studies of the Holmium-doped InGaAsP epilayers;physica status solidi (a);2003-12

4. Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates;Japanese Journal of Applied Physics;2001-10-15

5. Raman scattering study of photoluminescent spark-processed porous InP;Thin Solid Films;2000-12

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