Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor
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Published:1998-11-15
Issue:Part 1, No. 11
Volume:37
Page:5921-5925
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Saitoh Wataru,Yamazaki Katsuyuki,Tsutsui Masafumi,Asada Masahiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering