Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs-Reference-Cited by-同舟云学术

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Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

Published:1998-01-15 Issue:Part 2, No. 1A/B Volume:37 Page:L10-L12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Goodman Stewart A.,Auret F. Danie,Deenapanray Prakash N. K.,Myburg Gerrit

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19

2. Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells;Surface and Interface Analysis;2000

3. Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si;MRS Proceedings;1998-01

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