Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical Bounds on Electron Energy Filtering in Disordered Nanomaterials;Nano Letters;2019-10-31
2. Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress;Journal of Applied Physics;2004-11
3. Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices;Journal of Applied Physics;2002-05
4. Inelastic electron tunneling spectroscopy: Spectroscopy using a phenomenon of electron tunneling (Review).;BUNSEKI KAGAKU;2001
5. Characterization of Molecular Films by a Scanning Probe Microscope;Optical and Electronic Process of Nano-Matters;2001
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