Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
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Published:1991-09-01
Issue:Part 2, No. 9A
Volume:30
Page:L1566-L1568
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Murakami Kouichi,Fujita Shigeru,Masuda Kohzoh
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering