Critical Voltage for Atom Migration in Ballistic Copper Nanojunctions and Its Implications to Interconnect Technology for Very Large Scale Integrated Circuits
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=11/a=115201/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theory for electromigration at metal nanocontacts driven by kinetic energy transfer from “lucky electrons”;Applied Physics Express;2024-07-01
2. Electromigration at atomic-scale metal nanojunctions driven by “lucky electrons”;Applied Physics Express;2023-08-01
3. Terahertz Field Enhancement and Photon-Assisted Tunneling in Single-Molecule Transistors;Physical Review Letters;2015-09-23
4. One-Dimensional Nanotemplate Structure of a Si(110) Substrate;e-Journal of Surface Science and Nanotechnology;2012
5. Fabrication and Transport Properties of Quantum Nanotransistors Coupled with Nanogap Electrodes;Journal of the Vacuum Society of Japan;2012
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