Keldysh Approach for Coulomb Blockade in Double-Barrier Structures
Author:
Affiliation:
1. Department of Physical Electronics, Faculty of Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashihiroshima 724
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.63.1647
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fabrication Technologies for Double-SiO2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot;Japanese Journal of Applied Physics;2001-03-30
2. Spatial Distribution of Nonequilibrium Current in a Magnetic Field;Journal of the Physical Society of Japan;2000-04-15
3. Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors;Japanese Journal of Applied Physics;1999-01-30
4. New Structures of Quantized Current Plateaus in Semiconductor Turnstile Devices;Journal of the Physical Society of Japan;1998-11
5. Shot noise in double barrier structures;Solid-State Electronics;1998-07
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