Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots-Reference-Cited by-同舟云学术

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Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots

Published:2012-06-15 Issue:6 Volume:81 Page:064712
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Tayagaki Takeshi¹²,Ueda Kei¹,Fukatsu Susumu³,Kanemitsu Yoshihiko¹⁴

Affiliation:

1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan

2. PRESTO-JST, Kawaguchi, Saitama 332-0012, Japan

3. Graduate School of Arts and Sciences, The University of Tokyo, Meguro, Tokyo 153-8902, Japan

4. Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8510, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.81.064712

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of strain on the electronic and optical properties of Ge–Si dome shaped nanocrystals;Physical Chemistry Chemical Physics;2015

2. Simulation study of Ge/Si heterostructure solar cells yielding improved open-circuit voltage and quantum efficiency;Japanese Journal of Applied Physics;2014-10-17

3. Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells;Thin Solid Films;2014-04

4. Effect of deposition rate on the characteristics of Ge quantum dots on Si (001) substrates;Thin Solid Films;2014-04

5. Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots;Optics Express;2014-01-22

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