Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device-Reference-Cited by-同舟云学术

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Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device

Published:1986-01-20 Issue:Part 1, No. 1 Volume:25 Page:68-74
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Hirofumi,Fujita Masato,Aoshima Takaaki,Sugino Yuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device;Advanced Electronic Materials;2021-12-04

2. Advanced Quality Control (AQC) of Silicon Wafer Specifications for Yield Enhancement for Smart Manufacturing;IEEE Transactions on Semiconductor Manufacturing;2020-11

3. Dislocations Preferentially Generated in Compressed Regions of Saddle-Shaped Deformed, Precipitation-Softened, Czochralski-Grown Silicon Wafers;Japanese Journal of Applied Physics;2000-10-15

4. Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers;Journal of Crystal Growth;2000-05

5. The Analysis of Slip Extension and Induced Stress in 300 mm Diameter Wafers on Three-point Symmetrical Support;Japanese Journal of Applied Physics;2000-03-15

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