Surface States in Tunnelable MOS Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/14/i=7/a=999/pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures;Solid-State Electronics;1985-12
2. Long-term effects of injected electrons in tunnel oxide on the electrical characteristics of Al gate/thin oxide/Si structures—Relatively low oxide field case;IEEE Transactions on Electron Devices;1983-06
3. Interface properties of metal/oxide/semiconductor structures with ultrathin plasma SiO2;Thin Solid Films;1983-02
4. I–V characteristics of tunnel MOS structures with silicon oxide obtained in RF oxygen plasma;Solid-State Electronics;1982-08
5. Pd–thin‐SiO2–Si diode. I. Isothermal variation of H2‐induced interfacial trapping states;Journal of Applied Physics;1982-02
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