Structure Dependent Ultrafast Relaxation Time of Photo-excited Carriers in SiC-Reference-Cited by-同舟云学术

Structure Dependent Ultrafast Relaxation Time of Photo-excited Carriers in SiC

Published:2004-09-15 Issue:9 Volume:73 Page:2554-2561
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Tomita Takuro¹,Saito Shingo¹,Suemoto Tohru¹,Harima Hiroshi²,Nakashima Shin-ichi³

Affiliation:

1. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581

2. Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585

3. National Institute of Advanced Industrial Science and Technology, FED, Advanced Power Device Laboratories, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.73.2554

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of 4H–SiC nanoparticles using femtosecond pulsed laser ablation in deionized water;Optical Materials;2022-10

2. Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation;Journal of Manufacturing Processes;2022-09

3. Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses;Physical Review B;2020-02-24

4. Ultrafast optical control of multiple coherent phonons in silicon carbide using a pulse-shaping technique;Applied Physics Express;2018-10-31

5. 4H-SiC wafer slicing by using femtosecond laser double-pulses;Optical Materials Express;2017-06-15