Author:
Nozaki Tadatoshi,Okabayashi Hidekazu,Higuchi Kohei
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
3 articles.
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1. Phosphorus and Boron Ion Implantation Profiles in Molybdenum Gates;IEEE Transactions on Electron Devices;2007-01
2. Oxygen‐Doped Molybdenum Films for MOS Gate Application;Journal of The Electrochemical Society;1984-02-01
3. Mo2N/Mo gate MOSFET's;IEEE Transactions on Electron Devices;1983-06