Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
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1. Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb;Semiconductor Science and Technology;2020-07-23
2. Radiation damage of gallium antimonide—effect on electrical and optical properties;Radiation Effects and Defects in Solids;1994-11
3. gallium antimonide (GaSb), radiation induced deep defect states;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
4. gallium antimonide (GaSb), hole and electron traps;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.